CFK2062-P1

800-900 MHz +30 dBm Power GaAs FET August 2006 - Rev 03-Aug-06 CFK2062-P1 Features High Gain +30 dBm Power Output Proprietary Power FET Process >40% Linear Power Added Efficiency Surface Mount SO-8 Power Package Applications ISM Band Base Stations and Terminals Cellular Base Stations and Terminals Wireless Local Loop 8 7 6 5 D GND GND D Package Diagram G GND GND G 1 2 3 4 Back Plane is Source Description The CFK2062-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +30 dBm. The device is easily matched and provides excellent linearity at 1 Watt. Manufactured in Celeritek’s proprietary power FET process, this device is assembled in an industry standard surface mount SO-8 power package that is compatible with high volume, automated board assembly techniques. Specifications (TA = 25°C) The following specifications are guaranteed at room temperature in Celeritek test fixture at 850 MHz. www.DataSheet4U.com SO-8 Power Package Physical Dimensions Parameters Conditions Min Typ Max Units Vd = 8V, Id = 400 mA (Quiescent) P-1 dB SSG 3rd Order Products (1) Efficiency @ P1dB Vd = 5V, Id = 600 mA (Quiescent) P-1 dB SSG Parameters Conditions 29.0 30.0 18.0 20.0 — — — — Min — — — — — — Max dBm dB dBc % dBm dB Units 30 40 29.5 19.0 Typ gm Idss Vp BVGD JL (2) Vds = 2.0V, Vgs = 0V Vds = 2.0V, Vgs = 0V Vds = 3.0V, Ids = 25 mA Igd = 2.5 mA @150°C TCH — — — 15 — 65...