2N7002MTF

N-Channel Small Signal MOSFET FEATURES ! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability 2N7002MTF BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA SOT-23 Product Summary Part Number 2N7002 BVDSS 60V RDS(on) 5.0Ω ID 115mA 1.Gate 2. Source 3. Drain Absolute Maximum Ratings Symbol VDSS ID IDM www.DataSheet4U.com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range ① Value 60 115 73 800 ±20 0.2 1.6 - 55 to +150 Units V mA mA V W mW/℃ ℃ VGS PD TJ , TSTG Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient Typ. -Max. 625 Units ℃/W Rev. C1 2N7002MTF Symbol BVDSS VGS(th) IGSS Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Min. 60 1.2 IDSS ID(ON) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance ② 0.5 0.08 500 5.0 50 25 5 20 20 ns pF A Ω S Typ. - N-Channel Small Signal MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Max. Units 2.5 100 nA -100 1.0 µA V V Test Condition VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = 20V VGS = -20V VGS = 40V VGS = 40V, ...