RB160A60

RB160A60 Diodes Schottky barrier diode RB160A60 zApplications General rectification zDimensions (Unit : mm) CATHODE　BAND zFeatures 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low VF. 4) High ESD. φ0.6±0.1 ① ② 3 29±1 3.0±0.2 29±1 φ2.5±0.2 ROHM : MSR ① ② Manufacture Date zConstruction Silicon epitaxial planar zTaping specifications (Unit : mm) BROWN H2 A BLUE E Symbol Ａ Standard dimension value(mm) B C L1 H1 F L2 D T-31 　 52.4±1.5 +0.4 T-32 26.0 0 T-31 　 5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A±1.2 E T-32 1/2A±0.4 T-31 ±0.7 Ｆ T-32 0.2 max. T-31 H1 6.0±0.5 T-32 T-31 H2 5.0±0.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. ＊H1(6mm)：BROWN zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （t=100µs） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 1 60 150 -55 to +150 Unit V V A A ℃ ℃ (*1) Mounted on epoxy board. 180°Half sine wave zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current ESD break down voltage Symbol VF IR ESD Min. 0.4 20 Typ. 0.5 7.00 Max. 0.55 50 Unit V µA kV Conditions IF=1.0A VR=60V C=100pF,R=1.5kΩ, forward and reverse : 1 times Rev.B 1/3 RB160A60 Diodes zElectrical characteristic curves 1 Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=25℃ Ta=-25℃ 10000 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 100 10 1 0...