RB160A30

RB160A30 Diodes Schottky barrier diode RB160A30 zApplications General rectification z Dimensions (Unit : mm) CATHODE　BAND φ0.6±0.1 ① ② 1 zFeatures 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 29±1 3.0±0.2 29±1 φ2.5±0.2 ROHM : MSR ① ② Manufacture Date zConstruction Silicon epitaxial planar z Taping specifications (Unit : mm) BROWN H2 A BLUE E Symbol Standard dimension value(mm) B C L1 H1 F L2 D T-31 　 52.4±1.5 Ａ +0.4 T-32 26.0 0 T-31 　 5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A±1.2 E T-32 1/2A±0.4 T-31 ±0.7 Ｆ T-32 0.2 max. T-31 H1 6.0±0.5 T-32 T-31 H2 5.0±0.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. ＊H1(6mm)：BROWN zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （t=100µs） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 1 70 150 -55 to +150 Unit V V A A ℃ ℃ (*1)Mounted on epoxy board. 180°Half sine wave zElectrical characteristics (Ta=25°C) Parameter Forward voltagae Reverse current ESD break down voltage Symbol VF IR ESD Min. 0.33 20 Typ. 0.43 9.00 Max. 0.48 50 Unit V µA kV Conditions IF=1.0A VR=30V C=100pF,R=1.5kΩ, forward and reverse : 1 time Rev.B 1/3 RB160A30 Diodes zElectrical characteristic curves (Ta=25°C) 1 Ta=75℃ 10000 1000 Ta=75℃ 100 10 1 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 3...