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AM41DL32X8G Dataheets PDF



Part Number AM41DL32X8G
Manufacturers AMD
Logo AMD
Description Simultaneous Read/Write Flash Memory
Datasheet AM41DL32X8G DatasheetAM41DL32X8G Datasheet (PDF)

Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the res.

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Document
Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions. Publication Number 25558 Revision A Amendment +1 Issue Date September 5, 2002 PRELIMINARY Am41DL32x8G Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features s Power supply voltage of 2.7 to 3.3 volt s High performance — Access time as fast as 70 ns SOFTWARE FEATURES s Data Management Software (DMS) — AMD-supplied software manages data programming and erasing, enabling EEPROM emulation — Eases sector erase limitations s Package — 73-Ball FBGA s Supports Common Flash Memory Interface (CFI) s Erase Suspend/Erase Resume — Suspends erase operations to allow programming in same bank s Operating Temperature — –40°C to +85°C Flash Memory Features ARCHITECTURAL ADVANTAGES s Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in other bank — Zero latency between read and write operations s Data# Polling and Toggle Bits — Provides a software method of detecting the status of program or erase cycles s Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences HARDWARE FEATURES s Any combination of sectors can be erased s Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion s Secured Silicon (SecSi) Sector: Extra 256 Byte sector — Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. — Customer lockable: Sector is one-time programmable. Once locked, data cannot be changed s Hardware reset pin (RESET#) — Hardware method of resetting the internal state machine to reading array data s Zero Power Operation — Sophisticated power management circuits reduce power.


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