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AM41DL32X8G Dataheets PDF



Part Number AM41DL32X8G
Manufacturers AMD
Logo AMD
Description Simultaneous Read/Write Flash Memory
Datasheet AM41DL32X8G DatasheetAM41DL32X8G Datasheet (PDF)

Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the res.

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Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions. Publication Number 25558 Revision A Amendment +1 Issue Date September 5, 2002 PRELIMINARY Am41DL32x8G Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features s Power supply voltage of 2.7 to 3.3 volt s High performance — Access time as fast as 70 ns SOFTWARE FEATURES s Data Management Software (DMS) — AMD-supplied software manages data programming and erasing, enabling EEPROM emulation — Eases sector erase limitations s Package — 73-Ball FBGA s Supports Common Flash Memory Interface (CFI) s Erase Suspend/Erase Resume — Suspends erase operations to allow programming in same bank s Operating Temperature — –40°C to +85°C Flash Memory Features ARCHITECTURAL ADVANTAGES s Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in other bank — Zero latency between read and write operations s Data# Polling and Toggle Bits — Provides a software method of detecting the status of program or erase cycles s Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences HARDWARE FEATURES s Any combination of sectors can be erased s Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion s Secured Silicon (SecSi) Sector: Extra 256 Byte sector — Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. — Customer lockable: Sector is one-time programmable. Once locked, data cannot be changed s Hardware reset pin (RESET#) — Hardware method of resetting the internal state machine to reading array data s Zero Power Operation — Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero s WP#/ACC input pin — Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status — Acceleration (ACC) function accelerates program timing s Top or bottom boot block s Manufactured on 0.17 µm process technology s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard s Sector protection — Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector — Temporary Sector Unprotect allows changing data in protected sectors in-system PERFORMANCE CHARACTERISTICS s High performance — Access time as fast as 70 ns — Program time: 4 µs/word typical utilizing Accelerate function SRAM Features s Power dissipation — Operating: 30 mA maximum — Standby: 15 µA maximum s Ultra low power consumption (typical values) — 2 mA active read current at 1 MHz — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode s Minimum 1 million write cycles guaranteed per sector s 20 Year data retention at 125°C — Reliable operation for the life of the system s s s s CE1s# and CE2s Chip Select Power down features using CE1s# and CE2s Data retention supply voltage: 1.5 to 3.3 volt Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8) This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 25558 Rev: A Amendment/+1 Issue Date: September 5, 2002 Refer to AMD’s Website (www.amd.com) for the latest information. P R E L I M I N A R Y GENERAL DESCRIPTION Am29DL32xG Features The Am29DL322G/323G/324G consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. W.


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