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SUM110N04-05H Dataheets PDF



Part Number SUM110N04-05H
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SUM110N04-05H DatasheetSUM110N04-05H Datasheet (PDF)

SPICE Device Model SUM110N04-05H Vishay Siliconix N-Channel 40-V (D-S) 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extr.

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SPICE Device Model SUM110N04-05H Vishay Siliconix N-Channel 40-V (D-S) 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73146 S-60676Rev. B, 01-May-06 www.vishay.com 1 SPICE Device Model SUM110N04-05H Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition Simulated Data 3.6 704 0.0046 0.0076 0.0084 0.89 Measured Data Unit VGS(th) ID(on) VDS = VGS, ID = 250 µA VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A V A 0.0044 Ω Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125°C VGS = 10 V, ID = 30 A, TJ = 175°C Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.90 V Dynamic b Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec c Ciss Coss Crss Qg Qgs Qgd VDS = 20 V, VGS = 10 V, ID = 50 A VGS = 0 V, VDS = 25 V, f = 1 MHz 6400 659 268 99 37 21 6700 600 320 95 37 21 nC pF Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 73146 S-60676Rev. B, 01-May-06 SPICE Device Model SUM110N04-05H Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED) Document Number: 73146 S-60676Rev. B, 01-May-06 www.vishay.com 3 .


STV9306B SUM110N04-05H SX16A-12SA


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