512K x 16 Pseudo SRAM
EtronTech
Rev 1.0 Features
• Organized as 512K words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA...
Description
EtronTech
Rev 1.0 Features
Organized as 512K words by 16 bits Fast Cycle Time : 55ns, 70ns Standby Current : 100uA Deep power-down Current : 10uA (Memory cell data invalid) Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) Compatible with low power SRAM Single Power Supply Voltage : 3.0V±0.3V Package Type : 48-ball FBGA, 6x8mm Lead Free Package available - EM565168BC-XXG, (G : indicates Lead Free Package)
EM565168
512K x 16 Pseudo SRAM
Sep. 2003 Pin Assignment 48-Ball BGA, Top View
1 2 3 4 5 6
A
LB#
OE#
A0
A1
A2
CE2
B
DQ8
UB#
A3
A4
CE1#
DQ0
C D
DQ9
DQ10
A5
A6
DQ1
DQ2
VSS
DQ11
A17
A7
DQ3
VCC
Pin Description
Symbol A0 – A18 DQ0 – DQ15 CE1# CE2 OE# WE# LB# UB# VCC VSS Function Address Inputs Data Inputs/Outputs Chip Enable Deep Power Down Output Enable Write Control Lower Byte Control Upper Byte Control Power Supply Ground
E
VCC DQ14
DQ12 DQ13
NC A14
A16 A15
DQ4 DQ5
VSS DQ6
F
G H
DQ15
NC
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
NC
Ordering Information
Part Number
EM565168BC-55/55G EM565168BC-70/70G
Speed
55 ns 70 ns
Package
6x8 BGA; G: lead free 6x8 BGA; G: lead free
Overview
The EM565168 is a 8M-bit Pseudo SRAM organized as 512K words by 16 bits. It is designed with advanced CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration. This device operates from a single power supply. Advanced circuit technology provides both high speed and low power. It is automatically plac...
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