Document
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TOSHIBA InGaAℓP LED
TLRE50T,TLRME50T,TLSE50T,TLOE50T,TLYE50T, TLPYE50T,TLGE50T,TLFGE50T,TLPGE50T
Panel Circuit Indicators
Unit: mm
· · · · · · · ·
φ3 mm package InGaAℓP technology All plastic mold type Transparent lens Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure green) High intensity light emission Excellent low current light output Applications: message boards, security devices and dashboard displays
Line-up
Product Name TLRE50T TLRME50T TLSE50T TLOE50T TLYE50T TLPYE50T TLGE50T TLFGE50T TLPGE50T Color Red Red Red Orange Yellow Pure Yellow Green Green Pure Green
InGaAlP
Material
JEDEC JEITA TOSHIBA Weight: 0.14 g
― ― 4-3E1A
1
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
Maximum Ratings (Ta = 25°C)
Product Name TLRE50T TLRME50T TLSE50T TLOE50T TLYE50T TLPYE50T TLGE50T TLFGE50T TLPGE50T Forward Current IF (mA) 50 50 50 50 50 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 4 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 120 120 120 120 120 -40~100 -40~120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C)
Electrical and Optical Characteristics (Ta = 25°C)
Product Name TLRE50T TLRME50T TLSE50T TLOE50T TLYE50T TLPYE50T TLGE50T TLFGE50T TLPGE50T Unit Typ. Emission Wavelength ld 630 626 613 605 587 580 571 565 558 lP (644) (636) (623) (612) (590) (583) (574) (568) (562) nm Dl 20 23 20 20 17 14 17 15 14 IF 20 20 20 20 20 20 20 20 20 mA Luminous Intensity IV Min Typ. IF 850 850 1530 1530 1530 850 476 272 153 mcd 1800 2200 3500 4500 3500 2500 1500 1000 600 20 20 20 20 20 20 20 20 20 mA Forward Voltage VF Typ. Max IF 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.1 V 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 20 20 20 20 20 20 20 20 20 mA Reverse Current IR Max VR 50 50 50 50 50 50 50 50 50 mA 4 4 4 4 4 4 4 4 4 V
Precautions
· · · Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLRE50T
IF – VF
100 Ta = 25°C 50 30 10000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
3 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
Ta = 25°C
Relative luminous intensity
-20 0 60 80
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
20
40
0 580
600
620
640
660
680
700
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 20 90° 1.0 0 0
Ta = 25°C
30° 40° 50° 60° 70° 80° 90°
20°
10°
0°
10°
20°
30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
3
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLRME50T
IF – VF
100 Ta = 25°C 50 30 10000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
10 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
5
Ta = 25°C
Relative luminous intensity
-20 0 20 40 60 80
0.8
3
0.6
1 0.5 0.3
0.4
0.2
0.1
0 580
600
620
640
660
680
700
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 20 90° 1.0 0 0
Ta = 25°C
30° 40° 50° 60° 70° 80° 90°
20°
10°
0°
10°
20°
30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
4
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLSE50T
IF – VF
100 Ta = 25°C 50 30 10000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
3 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
Ta = 25°C
Relative luminous intensity
-20 0 60 80
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
20
40
0 560
580
600
620
640
660
680
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 20 90° 1.0 0 0
Ta = 25°C
30° 40° 50° 60° 70° 80° 90°
20°
10°
0°
10°
20°
30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
5
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLOE50T
IF – VF
100 Ta = 25°C 50 30 30000 Ta = 25°C 10000
IV – IF
IF (mA)
10
Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward current
(mcd)
1000
.