TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified ...
TECHNICAL DATA
NPN LOW POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1)
Symbol
VCEO VCBO VEBO IC
Value
30 75 7.0 500 0.5 0.8 1.8 3.0 -55 to +175 Max.
Unit
Vdc Vdc Vdc mAdc
TO-18 (TO-206AA)* 2N718A
2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N1613, L Operating & Storage Junction Temperature Range
PT
W
TJ, Tstg Symbol
0
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Unit
0 2N718A 97 C/W RθJC 2N1613, L 58 1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C
TO-39 (TO-205AD)* 2N1613
TO-5* 2N1613L
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO V(BR)CER ICBO IEBO Min. Max. Unit Vdc Vdc 10 10 ηAdc ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE = 10 Ω Collector-Base Cutoff Current VCB= 60 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 30 50
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2N718A, 2N1613, 2N1613L JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Mi...