HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3514S02
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• Super l...
HETERO JUNCTION FIELD EFFECT
TRANSISTOR
NE3514S02
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz Micro-X plastic (S02) package
APPLICATIONS
20 GHz-band DBS LNB Other K-band communication systems
ORDERING INFORMATION
Part Number NE3514S02-T1C NE3514S02-T1D Order Number NE3514S02-T1C-A NE3514S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking D Supplying Form 8 mm wide embossed taping Pin 4 (Gate) faces the perforation side of the tape
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Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3514S02
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot
Note
Ratings 4 −3 IDSS 100 165 +125 −65 to +125
Unit V V mA
µA
mW °C °C
Tch Tstg
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10593EJ01V0DS (1st edition) Date Published February 2006 CP(N)
NE3514S02
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. 1 5 − TYP. 2 10 − MAX. 3 15 0 Unit V mA dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise spe...