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IRF540ZLPBF Dataheets PDF



Part Number IRF540ZLPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF540ZLPBF DatasheetIRF540ZLPBF Datasheet (PDF)

PD - 95531A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design.

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PD - 95531A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRF540ZPbF IRF540ZSPbF IRF540ZLPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 26.5mΩ G ID = 36A S TO-220AB IRF540ZPbF D2Pak TO-262 IRF540ZSPbF IRF540ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy h EAS (Tested ) Single Pulse Avalanche Energy Tested Value Ù IAR Avalanche Current g EAR Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds i Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case i Case-to-Sink, Flat Greased Surface i Junction-to-Ambient j Junction-to-Ambient (PCB Mount) www.irf.com Max. 36 25 140 92 0.61 ± 20 83 120 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Typ. ––– 0.50 ––– ––– Max. 1.64 ––– 62 40 Units A W W/°C V mJ A mJ °C Units °C/W 1 07/23/10 IRF540Z/S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA e ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.093 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 21 26.5 mΩ VGS = 10V, ID = 22A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 36 ––– ––– V VDS = 25V, ID = 22A IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 100V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V Qg Total Gate Charge ––– 42 63 ID = 22A Qgs Qgd Gate-to-Source Charge Gate-to-Drain ("Miller") Charge ––– ––– 9.7 15 ––– ––– e nC VDS = 80V VGS = 10V td(on) Turn-On Delay Time ––– 15 ––– VDD = 50V tr Rise Time ––– 51 ––– ID = 22A td(off) tf Turn-Off Delay Time Fall Time ––– ––– 43 39 ––– ––– e ns RG = 12 Ω VGS = 10V LD Internal Drain Inductance ––– 4.5 ––– Between lead, D LS Internal Source Inductance nH 6mm (0.25in.) ––– 7.5 ––– from package G Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– 1770 ––– ––– 180 ––– ––– 100 ––– ––– 730 ––– ––– 110 ––– ––– 170 ––– and center of die contact S VGS = 0V VDS = 25V pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz f VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 36 MOSFET symbol (Body Diode) ISM Pulsed Source Current Ù (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ––– ––– 140 A showing the integral reverse ––– ––– 1.3 e p-n junction diode. V TJ = 25°C, IS = 22A, VGS = 0V ––– 33 ––– 41 50 62 e ns TJ = 25°C, IF = 22A, VDD = 50V nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com ID, Drain-to-Source Current (A) IRF540Z/S/LPbF 1000 100 TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 1 0.1 4.5V 60µs PULSE WIDTH Tj = 25°C 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 1000 100 TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 10 1 00.1 60µs PULSE WIDTH Tj = 175°C 1 10 11000 VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1000 ID, Drain-to-Source Current (Α) 100 TJ = 175°C 10 1 4.0 TJ = 25°C VDS = 25V 60µs PULSE WIDTH 5.0 6.0 7.0 VGS, Gate-to-Source Voltage (V).


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