Document
PD - 95531A
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRF540ZPbF IRF540ZSPbF IRF540ZLPbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 26.5mΩ
G
ID = 36A
S
TO-220AB IRF540ZPbF
D2Pak
TO-262
IRF540ZSPbF IRF540ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
h EAS (Tested ) Single Pulse Avalanche Energy Tested Value
à IAR
Avalanche Current
g EAR
Repetitive Avalanche Energy
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA
Junction-to-Case
i Case-to-Sink, Flat Greased Surface i Junction-to-Ambient j Junction-to-Ambient (PCB Mount)
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Max. 36 25 140 92 0.61 ± 20 83 120
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ. ––– 0.50 ––– –––
Max. 1.64 ––– 62 40
Units A W
W/°C V mJ A mJ °C
Units °C/W
1
07/23/10
IRF540Z/S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
e ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.093 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– 21 26.5 mΩ VGS = 10V, ID = 22A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
36 ––– ––– V VDS = 25V, ID = 22A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg
Total Gate Charge
––– 42 63
ID = 22A
Qgs Qgd
Gate-to-Source Charge Gate-to-Drain ("Miller") Charge
––– –––
9.7 15
––– –––
e nC VDS = 80V VGS = 10V
td(on)
Turn-On Delay Time
––– 15 –––
VDD = 50V
tr
Rise Time
––– 51 –––
ID = 22A
td(off) tf
Turn-Off Delay Time Fall Time
––– –––
43 39
––– –––
e ns RG = 12 Ω VGS = 10V
LD
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Coss Crss Coss Coss Coss eff.
Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
––– 1770 ––– ––– 180 ––– ––– 100 ––– ––– 730 ––– ––– 110 ––– ––– 170 –––
and center of die contact
S
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
f VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 36
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
à (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– 140
A showing the integral reverse
––– ––– 1.3
e p-n junction diode.
V TJ = 25°C, IS = 22A, VGS = 0V
––– 33 ––– 41
50 62
e ns TJ = 25°C, IF = 22A, VDD = 50V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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ID, Drain-to-Source Current (A)
IRF540Z/S/LPbF
1000 100
TOP BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
10
1 0.1
4.5V
60µs PULSE WIDTH Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
1000 100
TOP BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
4.5V 10
1 00.1
60µs PULSE WIDTH Tj = 175°C
1
10
11000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
ID, Drain-to-Source Current (Α)
100 TJ = 175°C
10
1 4.0
TJ = 25°C
VDS = 25V 60µs PULSE WIDTH
5.0
6.0
7.0
VGS, Gate-to-Source Voltage (V).