EMX28

EMX28 Transistors Low frequency transistor, complex (2-elements) Bipolar Transistor EMX28 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) EMT6 1.6 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package. 2) Collector saturation voltage is low. VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA 1.0 0.5 0.5 (6) (5) (4) 1.6 1.2 1pin mark (1) (2) (3) 0.22 0.13 Each lead has same dimensions zApplications General purpose small signal amplifier zPackaging specifications Package Type EMX28 Code Basic ordering unit (pieces) Taping T2R 8000 Abbreviated symbol : X28 zInner circuit (6) (5) (4) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP ∗1 PD Tj Tstg ∗2 Limits Unit V 30 V 30 6 V mA 400 mA 800 mW / TOTAL 150 120 mW / ELEMENT 150 °C −55 to +150 °C (1) (2) (3) ∗1 Pw=10ms, Single pulse ∗2 Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. 30 30 6 − − − 270 − − Typ. − − − − − 12...