PNP Silicon High Voltage Transistors
SXTA 92 SXTA 93
High breakdown voltage q Low collector-emitter saturation voltage...
PNP Silicon High Voltage
Transistors
SXTA 92 SXTA 93
High breakdown voltage q Low collector-emitter saturation voltage
q
Type SXTA 92 SXTA 93
Marking 2D 2E
Ordering Code (tape and reel) Q68000-A8393 Q68000-A8651
Pin Configuration 1 2 3 B C E
Package1) SOT-89
Maximum Ratings
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Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
Symbol SXTA 92 VCE0 VCB0 VEB0 IC Ptot Tj Tstg 300 300
Values SXTA 93 200 200 5 500 1 150
Unit V
mA W ˚C
– 65 … + 150
Rth JA Rth JS
≤ ≤
75 20
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SXTA 92 SXTA 93
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SXTA 92 SXTA 93 Collector-base breakdown voltage IC = 100 µA SXTA 92 SXTA 93 Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current VCB = 200 V, IE = 0 VCB = 160 V, IE = 0 VCB = 200 V, IE = 0, TA = 125 ˚C VCB = 160 V, IE = 0, TA = 125 ˚C Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V SXTA 92 SXTA 93 SXTA 92 SXTA 93 IEB0 hFE 25 40 25 25 VCEsat – – VBEsat – – – ...
