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SUF-1000 Dataheets PDF



Part Number SUF-1000
Manufacturers Sirenza Microdevices
Logo Sirenza Microdevices
Description Cascadable pHEMT MMIC Amplifier
Datasheet SUF-1000 DatasheetSUF-1000 Datasheet (PDF)

Preliminary SUF-1000 Product Description Sirenza Microdevices’ SUF-1000 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier. The self-biased direct-coupled topology provides exceptional cascadable performance from DC-20 GHz. Its efficient operation from a single 5V supply and its compact size (0.88 x 0.75 mm2) make it ideal for high-density multi-chip module applications. It is well-suited for wideband instrumentation and directconversion systems. Gain & Return Loss vs. Frequenc.

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Preliminary SUF-1000 Product Description Sirenza Microdevices’ SUF-1000 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier. The self-biased direct-coupled topology provides exceptional cascadable performance from DC-20 GHz. Its efficient operation from a single 5V supply and its compact size (0.88 x 0.75 mm2) make it ideal for high-density multi-chip module applications. It is well-suited for wideband instrumentation and directconversion systems. Gain & Return Loss vs. Frequency (GSG Probe Data) 12 GAIN 10 8 Gain (dB) 6 ORL 4 IRL 2 0 0 2 4 6 8 10 12 14 16 18 20 Fre que ncy (Ghz) -25 -30 \ -20 -5 -10 -15 Return Loss (dB) 0 DC-20 GHz, Cascadable pHEMT MMIC Amplifier Product Features • • • • • • • Broadband Flat Gain = 10 dB P1dB = 14 dBm Direct-coupled topology Efficient single-supply operation: 5V, 45mA Low Gain Variation vs. Temperature Compact die size (0.75 x 0.88 mm2) Patented Self-Bias Darlington Applications • • • • • Ultra-Broadband Communications Test Instrumentation Military & Space LO and IF Mixer Applications Replaces traditional dual-supply distributed amplifers Symbol Parameters Units Frequency Min. Typ. Max. www.DataSheet4U.com 10.5 10.5 9.0 14.0 P1dB Output Power at 1dB Compression dBm 14.0 14.0 26.0 OIP3 Output Third Order Intercept Point dBm 26.0 25.5 4.5 NF Noise Figure dB 4.5 5.0 -37.0 IRL Input Return Loss dB -20.5 -11.5 -21.5 ORL Output Return Loss dB -17.5 -11.0 -21.0 Isol Reverse Isolation dB -17.5 -17.0 VD Device Operating Voltage V 3.4 ID Device Operating Current mA 46 Gain Variation vs.Temperature dB/°C -0.01 ΔG/ΔT Rth, j-l Thermal Resistance (junction to backside) °C/W 262 VS = 5 V ID = 80 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm Test Conditions: Test Conditions: VS = 5.0V, Rbias=35 Ohms, ID = 46mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm TL = 25ºC ZS = ZL = 50 Ohms Measured with Bias Tees Gp Small Signal Power Gain dB ZS = ZL = 50 Ohms, 25C, GSG Probe Data With Bias Tees 2 GHz 6 GHz 16 GHz 2 GHz 6 GHz 16 GHz 2 GHz 6 GHz 16 GHz 2 GHz 6 GHz 16 GHz 2 GHz 6 GHz 16 GHz 2 GHz 6 GHz 16 GHz 2 GHz 6 GHz 16 GHz The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105415 Rev A Preliminary SUF-1000 DC-20 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data) S21 vs. Frequency 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 Fre que ncy (GHz) 0C 25C 85C dBm 15 14 13 12 11 P1dB vs. Frequency dB 10 9 8 7 6 5 0 2 4 6 8 10 12 14 16 18 Fre que ncy (GHz) 25C -20C 85C S11 vs. Frequency 0 -5 -10 dB -15 0C -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 Fre que ncy (GHz) 25C 85C S22 vs. Frequency 0 -5 -10 dB -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 Fre que ncy (GHz) 0C 25C 85C OIP3 vs. Frequency 30 -20C 25C 85C 26 dBm dB 7 6 5 4 3 2 Nois e Figure vs . Fre que ncy 28 24 25C -20C 85C 22 1 20 0 2 4 6 8 10 12 14 16 18 Fre que ncy (GHz) 0 0 2 4 6 8 10 12 14 16 18 Fre que ncy (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-105415 Rev A Preliminary SUF-1000 DC-20 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data) Freq (GHz) 0.1 0.5 0.85 2 4 6 10 16 Test Conditions: 20 VD (V) 3.4 3.4 3.4 3.4 3.4 3.4 3.4 3.4 3.4 Current (mA) 46 46 46 46 46 46 46 46 46 Gain (dB) 10.4 10.4 10.4 10.4 10.5 10.5 10.3 9.0 7.6 P1dB (dBm) OIP3 (dBm) S11 (dB) -34.0 -36.0 -37.0 -34.0 -26.0 -20.0 -14.0 -12.0 -13.0 S22 (dB) -21.0 -22.0 -22.0 -21.0 -19.0 -17.0 -14.0 -11.0 -10.0 NF (dB) 13.0 14.0 13.5 14.0 14.0 14.0 24.5 26.0 26.0 26.0 25.0 25.5 4.4 4.4 4.4 4.6 4.7 5.1 5.1 Test Conditions: GSG Probe Data With Bias Tees, Rbias = 35 Ohms OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25°C Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Absolute Limit 70mA 4V 10dBm Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temp. 280mW 150C -40 to +85C -65 to +150C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=Backside of die IDVD < (TJ - TL) / RTH, j-l Current Variation.


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