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SPM6G080-120D

Part Number	SPM6G080-120D
Manufacturer	Sensitron
Description	Three-Phase IGBT BRIDGE
Published	May 11, 2007
Detailed Description	SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4099, REV D SPM6G080-120D Three-Phase IGBT BRIDGE, With Gate Driver a...
Datasheet	SPM6G080-120D PDF File

Overview

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4099, REV D SPM6G080-120D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V www.
DataSheet4U.
com BVCES TC = 25 OC TC = 90 C ICM VGE IGES V GE(TH) O 1200 - - V IC - - 80 70 A 3.
0 - - 200 +/-20 +/- 100 6.
0 A V nA V Gate Threshold Voltage, ...

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SPM6G080-120D Three-Phase IGBT BRIDGE - Sensitron

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