Low Noise pHEMT GaAs FET
SPF-3143Z
Product Description
Sirenza Microdevices’ SPF-3143Z is a high performance 0.5μm pHEMT Gallium Arsenide FET. Th...
Description
SPF-3143Z
Product Description
Sirenza Microdevices’ SPF-3143Z is a high performance 0.5μm pHEMT Gallium Arsenide FET. This 600μm device is ideally biased at 3V, 20mA for lowest noise performance and battery powered requirements. At 5V, 40mA the device can deliver OIP3 of 32.5 dBm. It provides ideal performance as a driver stage in many commercial and industrial LNA applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Typical Gain Performance
Pb
RoHS Compliant & Green Package
Low Noise pHEMT GaAs FET
Product Features
Available in Lead free, RoHS compliant, & Green packaging DC-3.5 GHz Operation 0.58 dB NFMIN @ 2 GHz 21 dB GMAX @ 2 GHz +31 dBm OIP3 (5V,40mA) +17.7 dBm P1dB (5V,40mA) Low Current, Low Cost Apps circuits available for key bands
40 35 30 25 20 15 10 5 0 0
5V 40mA
Gain, Gmax (dB)
3V 20mA
Gmax Gain
Applications
Analog and Digital Wireless Systems 3G, Cellular, PCS Fixed Wireless, Pager Systems Driver Stage for Low Power Applications
2
4
Frequency (GHz)
6
8
10
Test Conditions
www.DataSheet4U.com
Symbol
Parameters
VDS=5V, IDQ=40mA, 25C (unless otherwise noted)
Units
Test Frequency (GHz)
Min.
Typ.
Max.
GMAX NFMIN S21 NF Gain OIP3 P1dB VP IDSS gm BVGSO BVGDO VDS IDS R...
Similar Datasheet