SPF-2086TK

Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TOI of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications. SPF-2086TK Low Noise pHEMT GaAs FET 0.1 - 6 GHz Operation 35 30 Gain, Gmax (dB) Typical Gain Performance 3v, 20mA 5v, 40mA 25 20 15 10 5 0 0 2 4 6 Gmax Gain Product Features 22 dB Gmax at 1.9 GHz 0.4 dB FMIN at 1.9 GHz +32 dBm Output IP3 +20 dBm Output Power at 1dB Compression Applications LNA for Analog and Digital Wireless Systems 3G, Cellular, PCS Fixed Wireless, Pager Systems Driver Stage for low power applications Test C ondition [1] = 100% Tested U nits Min. Typ. Max. www.DataSheet4U.com 8 10 12 Frequency (GHz) Symbol D evice C haracteristics, T = 25°C VDS=3V, IDQ=20mA (unless otherw ise noted) Gmax Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* Inserti on Gai n ZS=ZL= 50 Ohms Mi ni mum Noi se Fi gure ZS=ΓOPT , ZL=ZLOPT Output Thi rd Order Intercept Poi nt ZS=ZSOPT , ZL=ZLOPT Output 1dB C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT Saturated D rai n C urrent VDS = VDSP, VGS= 0V Tranconductance: VDS = VDSP, VGS= -0.25V Pi nch-Off Voltage: VDS = 2.0V, IDS = 150µA Gate-to-Source Breakdown Voltage IGS = 0.3mA, drai n open Gate-to-D rai n Break...