SPA-1318

Product Description Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. SPA-1318 2150 MHz 1 Watt Power Amplifier with Active Bias Product Features High Linearity Performance: +20.1 dBm W-CDMA Channel Power at -50 dBc ACP +47 dBm Typ. OIP3 VCC VBIAS RFIN N/C www.DataSheet4U.com RFOUT/ VCC Input Match Reduction Symbol f0 P 1dB AC P S 21 VSWR OIP3 NF Icc Parameters: Test Conditions: Z0 = 50 Ohms, Temp = 25ºC, Vcc = 5.0V Frequency of Operation R EC O M M EN D ED FO R Units MHz dB m dB c dB dB m dB mA V ºC/W Patented High Reliability GaAsHBT Technology Surface-Mountable Plastic Package Applications W-CDMA Systems Multi-Carrier Applications Min. 2110 29.0 -50.0 11.5 12.5 1.5:1 47.0 7.0 275 4.75 310 5.0 35 330 5.25 -47.0 13.5 Typ. Max. 2170 Output Power at 1dB Compression [1,2] Adjacent Channel Power [1] W-CDMA @ POUT = 20.1 dBm Small Signal Gain [1,2] Input VSWR [1,2] N O T Output Third Order Intercept Point Power out per tone = +14dBm [1,2] [2] Noise Figure Device Curre...