NJ42

F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S D S Die Size = 0.032" X 0.032" All Bond Pads = 0.004", Dia. Substrate is also Gate. Devices in this Databook based on the NJ42 Process. Datasheet 2N6449, 2N6450 IFN6449, IFN6450 www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 800 6 2 10 10 5 µS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 –2 Min – 300 Typ – 400 –1 – 10 10 – 12 Max Unit V nA mA V NJ42 Process Test Conditions IG = 1 µA, VDS = ØV VGS = – 150V, VDS = ØV VDS = 30V, VGS = ØV VDS = 30V, ID = 1 nA VDS = 30V, VGS = ØV VDS = 30V, VGS = ØV VDS = 30V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 15V, VGS = ØV 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-25 NJ42 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð4.2 V Gfs as a Function of VGS(OFF) 1.2 Transconductance in mS 3.0 VGS = Ø V Drain Current in mA 2.0 VGS = –1 V VGS = –2 V 1.0 VGS = –3 ...