NJ3600L

F-48 01/99 NJ3600L Process Silicon Junction Field-Effect Transistor ¥ Large Capacitance Detector Pre-Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D S-D S-D G Device in this Databook based on the NJ3600L Process. Datasheet IF3601 IF3602 G D-S D-S D-S Die Size = 0.074" X 0.074" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise Voltage rds(on) gfs Ciss Crss e ¯N 1 750 650 80 0.35 4 Ω mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 50 – 0.5 Min – 15 Typ – 22 100 1000 1000 –3 Max Unit V pA mA V NJ3600L Process Test Conditions IG = 1 µA, VDS = ØV VGS = 10V, VDS = ØV VDS = 10V, VGS = ØV VDS = 10V, ID = 1 nA ID = 1 mA, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 30 Hz nV/√HZ VDG = 3V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-49 NJ3600L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð1.25 V Gfs as a Function of VGS(OFF) 200 Transco...