NJ132

F-32 01/99 NJ132 Process Silicon Junction Field-Effect Transistor ¥ High Speed Switch ¥ Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ132 Process. Datasheet 2N4391, 2N4392 2N4393 2N4856, 2N4857 2N4858, 2N4859 2N4860, 2N4861 2N4856A, 2N4857A 2N4858A, 2N4859A Datasheet 2SK113 IFN113 2N4860A, 2N4861A J111, J112 J113 www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Input Capacitance Feedback Capacitance Turn On Delay Time Rise Time Turn Off Delay Time rds(on) Ciss Ciss td(on) tr td(off) 25 12 2.5 6 5 50 Ω pF pF ns ns ns V(BR)GSS IGSS IDSS VGS(OFF) 10 – 0.5 Min – 30 Typ – 45 – 10 – 100 150 –7 Max Unit V pA mA V NJ132 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VDS = 20V, VGS = ØV VDS = 20V, ID = 1 nA ID = 1 mA, VGSS = ØV VDS = 20V, VGS = ØV VDS = ØV, VGS = – 10V VDD = – 10V, ID = 10 mA RL = 10V, VGS(ON) = ØV VGS(OFF) = – 6V f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-33 NJ132 Process Silicon Junction F...