F-2
01/99
NJ01 Process
Silicon Junction Field-Effect Transistor
¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also ...
