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FPD1000V

Filtronic
Part Number FPD1000V
Manufacturer Filtronic
Description 1W POWER PHEMT
Published May 11, 2007
Detailed Description PRELIMINARY • FEATURES (1.8 GHz) ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Outpu...
Datasheet PDF File FPD1000V PDF File

FPD1000V
FPD1000V

Overview
PRELIMINARY • FEATURES (1.
8 GHz) ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias DRAIN BOND PAD (2X) FPD1000V 1W POWER PHEMT GATE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands.
The FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.
Typical applications include drivers or ...


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