FPD1000AS

FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE (1.8 GHz) ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Suitable for applications to 5 GHz DESCRIPTION AND APPLICATIONS SEE PACKAGE OUTLINE FOR MARKING CODE The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers. ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1dB Gain Compression Power Gain at dB Gain Compression Maximum Stable Gain S21/S12 Power-Added Efficiency at 1dB Gain Compression 3 -Order Intermodulation Distortion ΓS and ΓL tuned for Optimum IP3 Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (channel-to-case) Phone: +1 408 850-5790 Fax: +1 408 850-5766 rd Symbol P1dB G1dB MSG PAE IM3 Test Conditions VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 VDS = 10 V; IDS = 200mA PIN = 0dBm, 50Ω system...