FPD10000AF

PRELIMINARY PERFORMANCE (1.8 GHz) ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website ♦ Usable Gain to 3.8GHz DESCRIPTION AND APPLICATIONS FPD10000AF 10W PACKAGED POWER PHEMT SEE PACKAGE OUTLINE FOR MARKING CODE The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers. ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1dB Gain Compression Class B Operation Power Gain at dB Gain Compression Maximum Stable Gain: S21/S12 PIN = 0dBm, 50Ω system Power-Added Efficiency at 1dB Gain Compression Adjacent Channel Power Ratio WCDMA BTS Forward (64 channels) 10.15 dB Pk/Avg 0.001% Saturated Drain-Source Current Gate-Source Leakage Current Pinch-Off Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (channel-to-case) IDSS IGSO |VP| |VBDGD| ΘCC VDS = 3.0 V; VGS = 0 V VGS = -3 V VDS = 3.0 V; IDS = 19 mA IGD = 19 mA See Note on following page 30 5.2 3 1.1 35 3.5 A mA V V °C/W ACPR PAE G1dB MSG VDS = 12V; ID...