CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AI3
Spec. No. : C855I3 Issued Date : 2004.09.1...
CYStech Electronics Corp.
Silicon
NPN Epitaxial Planar
Transistor
BTD1857AI3
Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date :2017.12.08 Page No. : 1/6
Description
High BVCEO High current capability Complementary to BTB1236AI3 RoHS compliant package
Symbol
BTD1857AI3
Outline
TO-251
B:Base C:Collector E:Emitter
BCE
Ordering Information
Device BTD1857AI3-0-UA-G
Package
TO-251 (Pb-free lead plating and halogen-free package)
Shipping 80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec,UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products Product name
BTD1857AI3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP
PD
Tj Tstg
Limits
180 160 5 1.5 3 1 10 150 -55~+150
Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date :2017.12.08 Page No. : 2/6
Unit
V V V A A W W °C °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol Rth,j-c
Rth,j-a
Value 12.5
125
Unit °C/W °C/W
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob
Min.
180 160 5
1...