BTD1857AFP

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AFP Spec. No. : C855FP Issued Date : 2004.08.15 Revised Date :2015.10.21 Page No. : 1/5 Description High BVCEO High current capability Complementary to BTB1236AFP Pb-free lead plating package Symbol BTD1857AFP Outline TO-220FP B：Base C：Collector E：Emitter BCE Ordering Information Device BTD1857AFP-0-UB-X Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name BTD1857AFP CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 160 5 1.5 3 2 20 150 -55~+150 Spec. No. : C855FP Issued Date : 2004.08.15 Revised Date :2015.10.21 Page No. : 2/5 Unit V V V A A W W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 160 5 160 30 - Typ. 140 27 Max. 1 1 0.6 1.5 320 - Unit V V V µA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC...