BTD1857A3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857A3 Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2016.03.28 Page No. : 1/9 Description High BVCEO High current capability Complementary to BTB1236A3 Pb-free lead plating and halogen-free package Symbol BTD1857A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Ordering Information Device BTD1857A3-X-TB-G BTD1857A3-X-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTD1857A3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 180 5 1.5 3 750 150 -55~+150 Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2016.03.28 Page No. : 2/9 Unit V V V A A mW °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 180 5 0.45 180 30 - Typ. 140 1...