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SLD-1000 Dataheets PDF



Part Number SLD-1000
Manufacturers Sirenza Microdevices
Logo Sirenza Microdevices
Description 4 Watt Discrete LDMOS FET
Datasheet SLD-1000 DatasheetSLD-1000 Datasheet (PDF)

Product Description Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for power amplifier, or transmitter applications. These robust power transistors are fabricated using Sirenza’s high performance XEMOS IITM process. SLD-1000 4 Watt Discrete LDMOS FET -Bare Die Functio.

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Product Description Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for power amplifier, or transmitter applications. These robust power transistors are fabricated using Sirenza’s high performance XEMOS IITM process. SLD-1000 4 Watt Discrete LDMOS FET -Bare Die Functional Schematic Diagram ESD Protection • • • • • • • Product Features 4 Watt Output P1dB Single Polarity Operation 19dB Gain at 900 MHz XeMOS IITM LDMOS Integrated ESD Protection, Class 1B Aluminum Topside Metallization Gold Backside Metallization Gate Manifold Drain Manifold Source - Backside Contact RF Specifications Symbol Frequency Gain Efficiency Linearity RTH Parameter Frequency of Operation 3.5 Watts CW, 900 MHz Drain Efficiency at 3.5 Watts CW, 900 MHz • • • • • Applications Base Station PA Driver Repeaters Military Communications RFID GSM, CDMA, Edge, WDCDMA Unit MHz dB % dBc Watts ºC/W Min 10 Typ 19 43 -30 4 11 Max 2700 - 3rd Order IMD at 3.5 Watts PEP (Two Tone) 900 MHz 1dB Compression (P1dB) 900 MHz Thermal Resistance (Junction-to-Case, mounted in package) Test Conditions: Mounted in ceramic package and tested in SirenzaT Evaluation Board VDS = 28.0V, IDQ = 30mA, TMounting Surface = 25ºC DC Specifications Symbol gm VGS Threshold VDS Breakdown Ciss Crss Coss RDSon Parameter Forward Transconductance @ 30mA IDS IDS=3mA 1mA IDS Current Input Capacitance (Gate to Source) VGS=0V, VDS=28V Reverse Capacitance (Gate to Drain) VGS=0V, VDS=28V Output Capacitance (Drain to Source) VGS=0V, VDS=28V Drain to Source Resistance, VGS=10V VDS=250mV Unit mA / V Volts Volts pF pF pF Ω 3.0 65 Min Typical 150 4.2 70 5.2 0.2 3.2 3.0 3.5 5.0 Max The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104291 Rev C SLD-1000 10-2700 MHz 4 Watt LDMOS FET - Bare Die Quality Specifications Parameter ESD Rating MTTF Description Human Body Model 200oC Channel Unit Volts Hours Typical 750 1.2 X 106 Contact Description Pad # 1 2 3 Function Gate Drain Source Description Aluminum metallized manifold MOSFET Gate with ESD protection structure. (Topside contact).


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