Preliminary
SLD-3091FZ
Product Description
Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS ...
Preliminary
SLD-3091FZ
Product Description
Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS
transistor designed for operation from 10 to 2200MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-3091FZ is typically used in power amplifiers, repeaters, and radio amplifier applications. The power
transistor is fabricated using Sirenza’s high performance XeMOS IITM process.
Pb
RoHS Compliant & Green Package
30 Watt Discrete LDMOS FET in Ceramic Flanged Package
Functional Schematic Diagram Product Features
ESD Protection
30 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz High Efficiency: 45% at 30W CW XeMOS II LDMOS Integrated ESD Protection, 1B
Applications
Case Flange = Ground
Key RF Specifications
Symbol Frequency Gain Efficiency IRL Linearity RTH Parameter Frequency of Operation 30 Watt CW, 915 MHz Drain Efficiency at 30 Watt CW, 915 MHz
Base Station PA driver Repeaters Radio Amplifier Military Communication GSM, CDMA, RFID, Point-to-Point
Units MHz dB % dB dBc Watt ºC/W
Min. 10
Typ. 19 45 -15 -28 35 2.4
Max. 2200
Input Return Loss, 30 Watt Output Power, 915 MHz 3rd Order IMD at 30 Watt PEP (Two Tone), 915 MHz 1dB Compression (P1dB), 915 MHz Thermal Resistance (Junction-to-Case)
Test Conditions VDS = 28.0V, IDQ = 300mA, TFlange = 25ºC
T
Key DC Parameters
Symbol gm VGSThreshold VDS Breakdown Ciss Crss Coss RDSon Parameter Fo...