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Product Description
The SGA-3563 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of intermodulation products. Operation requires only a single positive voltage supply, 2 DC-blocking capacitors, a bias resistor and an RF choke. The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
Gain & Return Loss vs. Frequency
VD= 3.25 V, ID= 35 mA (Typ.)
SGA-3563 SGA-3563Z
Pb
RoHS Compliant & Green Package
DC-5000 MHz Silicon Germanium Cascadable HBT MMIC Amplifier
Product Features • Available in Lead Free, RoHS Compliant • • • • • •
green package ( Z Suffix ) 50 Ohm Cascadable Gain Block High Gain: 25.5 dB typ. at 850 MHz High Output IP3: 24.5 dBm typ. at 1950 MHz Low Noise Figure: 2.7 dB typ. at 1950 MHz Low Current Draw: 35mA typ. Single Voltage Supply Operation
32
GAIN
0 -10
IRL
24 Gain (dB) 16
ORL
-20 -30 -40 0 1 2 3 Frequency (GHz) 4 5
Return Loss (dB)
8 0
Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite
Min. 23.5 19.5 Typ. 25.5 21.5 20.0 13.0 12.5 24.0 24.5 5000 1950 1950 1950 3.0 31 11.2 11.2 15.5 20.0 2.7 3.25 35 255
TLEAD = 25ºC ZS = ZL = 50 Ohms
Symbol G
Parameter Small Signal Gain
Freq. (MHz ) 850 1950 2400 850 1950 850 1950
Max. 27.5 23.5
Units dB
P 1dB OIP3
Bandwidth
Output Power at 1dB Compression Output Third Order Intercept Point
(Tone Spacing = 1 MHz, Pout per tone = -5 dBm )
11.0 22.5
dB m dB m MHz dB dB 3.7 3.5 39 dB V mA °C/W
Determined by Return Loss (>10dB) Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead)
Test Conditions: ID = 35 mA (Typ.)
IRL ORL NF VD ID RTH, j-l
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
EDS-101496 Rev. D 1
Phone: (800) SMI-MMIC http://www.sirenza.com
SGA.