Document
Product Description
Sirenza Microdevices’ SBF-4089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
S -P aram e te rs v s F re q u e n c y +2 5 c
16 15.5 15 14.5
Gain(dB)
s 21 s 11 s 22
SBF-4089 SBF-4089Z
Pb
RoHS Compliant & Green Package
DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
Product Features
• Available in Lead Free, RoHS compliant,
& Green packaging • IP3 = 42dBm @ 240MHz • Stable Gain Over Temperature • Robust 1000V ESD, Class 1C • Operates From Single Supply • Low Thermal Resistance
0
-5 -10 -15 -20 -25
IRL,ORL(dB)
14 13.5 13 12.5 12 11.5 11 0 100 200 300 400 500 600 700 800 900 Fre q
Applications
• Receiver IF Amplifier • Cellular, PCS, GSM, UMTS • PA Driver Amp • Wireless Data, Satellite Terminals
U nits dB Frequency 70MHz 240 MHz 500 MHz 70MHz 240 MHz 400 MHz 70MHz 240 MHz 400 MHz 500 MHz 500 MHz 500 MHz 4.5 82 Min. 13.3 13.2 Typ. 14.9 14.8 14.7 20.1 20.1 19.9 40.0 42.0 41.0 17.0 16.0 3.3 4.9 90 43 4.3 5.3 98 Max. 16.3 16.2
Symbol G
Parameter Small Si gnal Gai n
P 1dB
Output Power at 1dB C ompressi on
dB m
18.4
OIP3 IRL ORL NF VD ID RTH, j-l
Output Thi rd Order Intercept Poi nt Input Return Loss Output Return Loss Noi se Fi gure D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (juncti on to lead)
VS = 8 V RBIAS = 33 Ohms ID = 90 mA Typ. TL = 25ºC
dB m dB dB dB V mA °C /W
39.0 13.0 12.0
Test Conditions:
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms, App circuit page 4.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103412 Rev. C
Preliminary
SBF-4089 DC-500 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz) Frequency (MHz)
Symbol Parameter Unit 70 100 240 400 500 850
G OIP3 P 1dB IRL ORL S 12 NF
Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
VS 8V V ==8 V S 39Ohms Ohms RBIAS R ==33
BIAS L
dB dB m dB m dB dB dB dB
14.9 40.0 20.1 18 15 18 3.2
S
14.9 40.5 20.1 22 16 18 3.3
L
14.9 42.5 20.1 22 17 18 3.3
14.8 41.0 19.9 21 19 18 3.3
14.7 40.0 20.1 21 21 18 3.3
14.3 35.1 18.1 19 18 18 3.3
Test Conditions: Test Conditions:
ID==90 80 mATyp. Typ. ID mA =25ºC 25ºC TTL=
OIP3 ToneSpacing Spacing==11MHz, MHz, Pout Pout per tone dBm OIP Tone per tone == 00 dBm 3 ZL= =50 50 Ohms, Ohms ZZS ==Z App circuit Page 4
Absolute Maximum Ratings
P1dB vs Temp
20.5 Output Power (dBm) 20 19.5 19 18.5 18 17.5 17 50 250 450 Frequency(MHz) 650 850
+25c -40c +85c
Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max Operating Dissipated Power Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Absolute Limit
150 mA
6V +19 dBm 0.8 W
+150°C -40°C to +85°C +150°C
Max. Storage Temp.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l
TOIP vs Temp
45 43 41 39 37 35 33 31 29 27 25 50
Noise Figure vs Temp
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 50
TOIP (dB)
NF (dB)
+25c -40c +85c
+25c -40c +85c
250
450
650
850
250
450
650
850
Frequency(MHz)
Frequency(MHz)
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
ED.