NGA-586

Product Description NGA-586 Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA-586 typically provides +39.6 dBm output IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @T L=+25°C 24 GAIN DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier See Application Note AN-059 for Alternates OBSOLETE Product Features • High Gain : 18.6 dB at 1950 MHz • Cascadable 50 Ohm • Patented InGaP Technology • Operates From Single Supply • Low Thermal Resistance Package 0 20 Gain (dB) IRL -10 Return Loss (dB) 16 ORL -20 Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite Units dB dBm dBm M Hz dB dB dB V mA °C/W 1950 M Hz 1950 M Hz 1950 M Hz 4.5 72 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 17.8 Ty p. 19.8 18.6 17.9 18.9 18.5 39.6 34.0 5500 14.9 19.5 3.5 4.9 80 121 5.4 88 Max. 21.8 1...