MMBT4403
MMBT4403 PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für d...
MMBT4403
MMBT4403
PNP
Surface Mount General Purpose Si-Epi-Planar
Transistors Si-Epi-Planar Universal
transistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2.9 ±0.1 0.4 3 1.3±0.1 1.1
PNP
250 mW SOT-23 (TO-236) 0.01 g
Version 2006-05-09 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Type Code
1 1.9 2
Dimensions - Maße [mm] 1=B 2=E 3=C
Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC Tj TS
2.5 max
Grenzwerte (TA = 25°C) MMBT4403 40 V 40 V 5V 250 mW 1) 600 mA -55...+150°C -55…+150°C
Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis )
2
Kennwerte (Tj = 25°C) Typ. – – – – – – – –
-4
Max. – – – 300 – 500 15 kΩ 30 µS 8*10-4 0.40 V 0.75 V
-
IC IC IC IC IC
= = = = =
0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA,
-
VCE VCE VCE VCE VCE
= = = = =
1V 1V 1V 2V 2V
hFE hFE hFE hFE hFE hfe hie hoe hre - VCEsat - VCEsat
30 60 100 100 20 60 1.5 kΩ 1 µS 0.1*10 – –
h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz Small...