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MMBT4403

Diotec Semiconductor

Surface Mount General Purpose Si-Epi-Planar Transistors

MMBT4403 MMBT4403 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für d...


Diotec Semiconductor

MMBT4403

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Description
MMBT4403 MMBT4403 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-05-09 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC Tj TS 2.5 max Grenzwerte (TA = 25°C) MMBT4403 40 V 40 V 5V 250 mW 1) 600 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 Kennwerte (Tj = 25°C) Typ. – – – – – – – – -4 Max. – – – 300 – 500 15 kΩ 30 µS 8*10-4 0.40 V 0.75 V - IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA, - VCE VCE VCE VCE VCE = = = = = 1V 1V 1V 2V 2V hFE hFE hFE hFE hFE hfe hie hoe hre - VCEsat - VCEsat 30 60 100 100 20 60 1.5 kΩ 1 µS 0.1*10 – – h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz Small...




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