KSC2500

KSC2500 KSC2500 Medium Power Amplifier & Low Saturation 1 TO-92L 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 30 10 6 2 5 0.5 900 150 -55 ~ 150 Units V V V V A A A mW °C °C * PW≤10ms, Duty Cycle≤30% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO BVCBO BVEBO hFE 1 hFE 2 VCE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=30V, IE=0 VEB=6V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A IC=2A, IB=50mA VCE=1V, IC=2A VCE=1V, IC=0.5A VCB=10V, IE=0, f=1MHz 10 6 140 70 600 200 0.2 0.86 150 27 0.5 1.5 V V MHz pF Min. Typ. Max. 100 100 Units nA nA V V hFE1 Classification Classification hFE1 A 140 ~ 240 B 200 ~ 330 C 300 ~ 450 D 420 ~ 600 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2500 Typical Characteristics 5 IB = 50mA IB = 40mA 10000 EMITTER COMMON Ta=25 C hFE, DC CURRENT GAIN o EMITTER COMM...