ZTX614
ZTX614
NPN Darlington Transistor
• These device is designed for applications requiring extremely high gain at co...
ZTX614
ZTX614
NPN Darlington
Transistor
These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage. Sourced from process 06.
C BE
TO-226
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 100 120 10 800 -55 ~ +150 Units V V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition IC = 10mA, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 60V, IE = 0 VEB = 8V, IC = 0 IC = 100mA, VCE = 5V IC = 500mA, VCE = 5V IC = 800mA, IB = 8mA IC = 800mA, VBE = 5V 5000 10000 1.25 1.8 V V Min. 100 120 10 0.1 0.1 µA µA Typ. Max. Units V V Off Characteristics Collector-Emitter Breakdown Voltage* V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on) Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage
On Characteristic...