DatasheetsPDF.com

SFU9210 Dataheets PDF



Part Number SFU9210
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet SFU9210 DatasheetSFU9210 Datasheet (PDF)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 2.084 Ω (Typ.) 1 SFR/U9210 BVDSS = -200 V RDS(on) = 3.0 Ω ID = -1.6 A D-PAK 2 1 3 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Con.

  SFU9210   SFU9210


Document
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 2.084 Ω (Typ.) 1 SFR/U9210 BVDSS = -200 V RDS(on) = 3.0 Ω ID = -1.6 A D-PAK 2 1 3 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -200 -1.6 -1.08 1 O Units V A A V mJ A mJ V/ns W W W/ C o -6.4 + _ 30 119 -1.6 1.9 -5.0 2.5 19 0.15 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 6.58 50 110 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation SFR/U9210 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(£¢Miller£¢) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.2 ------1.0 220 45 16 10 20 27 12 9 1.8 4.8 ---4.0 -100 100 -10 -100 3.0 -285 65 25 30 50 65 35 11 --nC ns pF µA Ω Ω V V nA P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-200V VDS=-160V,TC=125 C VGS=-10V,ID=-0.8A VDS=-40V,ID=-0.8A 4 O 4 O o o V/ C ID=-250µA VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-1.75A, RG=18 Ω See Fig 13 4 O 5 O VDS=-160V,VGS=-10V, ID=-1.75A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------110 0.42 -1.6 -6.4 -4.0 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-1.6A,VGS=0V TJ=25 C,IF=-1.75A diF/dt=100A/µs 4 O o o O 4 Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 L=70mH, I =-1.6A, V =-50V, R =27Ω*, Starting T =25 C O AS DD G J 3 _-1.75A, di/dt < _ 250A/µs, VDD < _ BVDSS , Starting T J =25oC O ISD < 4 _ 2% Pulse Test : Pulse Width = 250 µ s, Duty Cycle < O 5 Essentially Independent of Operating Temperature O ©1999 Fairchild Semiconductor Corporation P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS SFR/U9210 Fig 2. Transfer Characteristics [A] -ID , Drain Current 100 150 oC 25 C o -ID , Drain Current [A] Top : 100 - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 10-1 @ Notes : 1. 250 µs Pulse Test = 25 oC 2. T C 0 10 @ Notes : =0V 1. V GS 2. V = -40 V DS - 55 oC 3. 250 µs Pulse Test 10-1 101 10-1 2 4 6 8 10 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] RDS(on) , [ Ω] Drain-Source On-Resistance 10 8 6 VGS = -10 V 4 -IDR , Reverse Drain Current [A] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage 100 150 oC @ Notes : =0V 1. V GS 2. 250 µs Pulse Test 2 VGS = -20 V 0 0 1 2 3 4 5 6 7 @ Note : T = 25 oC J 25 oC 10-1 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Ciss= Cgs+ C ( Cds= shorted ) gd Fig 6. Gate Charge vs. Gate-Source Voltage [V] 400 Coss= Cds+ C gd Crss= Cgd [pF] 300 C oss 200 C rss 100 @ Notes : =0V 1. V GS 2. f = 1 MHz -VGS , Gate-Source Voltage C iss 10 VDS = -40 V = -100 V V DS = -160 V V DS Capacitance 5 @ Notes : I =-1.75 A D 0 0 2 4 6 8 10 0 100 1 10 -VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] ©1999 Fairchild Semiconductor Corporation SFR/U9210 -BV DSS , (Normalized) Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 3.0 Fig 7. Breakdown Voltage vs. Temperature 1.2 RDS(on) , (Normalized) 2.5 1.1 2.0 1.0 1.5 1.0 @ Notes : = -10 V 1. V GS 2. I = -0.9 A D -50 -25 0 25 50 75 100 125 150 175 0.9 @ Notes : =0V 1. V GS 2. I = -250 µA D 0.5 0.8 -75 -5.


SFR9210 SFU9210 ZTX614


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)