Document
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 2.084 Ω (Typ.)
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SFR/U9210
BVDSS = -200 V RDS(on) = 3.0 Ω ID = -1.6 A
D-PAK
2 1 3
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
o Total Power Dissipation (TA=25 C) * o o
Value -200 -1.6 -1.08
1 O
Units V A A V mJ A mJ V/ns W W W/ C
o
-6.4 + _ 30 119 -1.6 1.9 -5.0 2.5 19 0.15 - 55 to +150
O 1 O 1 O 3 O
2
Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
o
TJ , TSTG TL
o
C
300
Thermal Resistance
Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 6.58 50 110
o
Units C/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
SFR/U9210
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(£¢Miller£¢) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.2 ------1.0 220 45 16 10 20 27 12 9 1.8 4.8 ---4.0 -100 100 -10 -100 3.0 -285 65 25 30 50 65 35 11 --nC ns pF µA Ω Ω V V nA
P-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-200V VDS=-160V,TC=125 C VGS=-10V,ID=-0.8A VDS=-40V,ID=-0.8A
4 O 4 O
o
o V/ C ID=-250µA
VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-1.75A, RG=18 Ω See Fig 13
4 O 5 O
VDS=-160V,VGS=-10V, ID=-1.75A See Fig 6 & Fig 12
4 O 5 O
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
Min. Typ. Max. Units --------110 0.42 -1.6 -6.4 -4.0 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-1.6A,VGS=0V TJ=25 C,IF=-1.75A diF/dt=100A/µs
4 O
o o
O
4
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 L=70mH, I =-1.6A, V =-50V, R =27Ω*, Starting T =25 C O AS DD G J 3 _-1.75A, di/dt < _ 250A/µs, VDD < _ BVDSS , Starting T J =25oC O ISD < 4 _ 2% Pulse Test : Pulse Width = 250 µ s, Duty Cycle < O 5 Essentially Independent of Operating Temperature O
©1999 Fairchild Semiconductor Corporation
P-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
V GS
SFR/U9210
Fig 2. Transfer Characteristics
[A] -ID , Drain Current
100 150 oC 25 C
o
-ID , Drain Current
[A]
Top :
100
- 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V
10-1
@ Notes : 1. 250 µs Pulse Test = 25 oC 2. T C
0 10
@ Notes : =0V 1. V GS 2. V = -40 V DS - 55 oC 3. 250 µs Pulse Test
10-1
101
10-1
2
4
6
8
10
-VDS , Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
RDS(on) , [ Ω] Drain-Source On-Resistance
10
8
6 VGS = -10 V 4
-IDR , Reverse Drain Current
[A]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
100
150 oC @ Notes : =0V 1. V GS 2. 250 µs Pulse Test
2 VGS = -20 V 0 0 1 2 3 4 5 6 7 @ Note : T = 25 oC J
25 oC
10-1
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Ciss= Cgs+ C ( Cds= shorted ) gd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
400 Coss= Cds+ C gd Crss= Cgd
[pF]
300
C oss 200 C rss 100 @ Notes : =0V 1. V GS 2. f = 1 MHz
-VGS , Gate-Source Voltage
C iss
10
VDS = -40 V = -100 V V DS = -160 V V DS
Capacitance
5
@ Notes : I =-1.75 A D 0 0 2 4 6 8 10
0 100
1 10
-VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
©1999 Fairchild Semiconductor Corporation
SFR/U9210
-BV DSS , (Normalized) Drain-Source Breakdown Voltage
P-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
Drain-Source On-Resistance
3.0
Fig 7. Breakdown Voltage vs. Temperature
1.2
RDS(on) , (Normalized)
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : = -10 V 1. V GS 2. I = -0.9 A D -50 -25 0 25 50 75 100 125 150 175
0.9
@ Notes : =0V 1. V GS 2. I = -250 µA D
0.5
0.8 -75
-5.