QSE213C/QSE214C Plastic Silicon Infrared Phototransistor
March 2006
QSE213C/QSE214C Plastic Silicon Infrared Phototran...
QSE213C/QSE214C Plastic Silicon Infrared Photo
transistor
March 2006
QSE213C/QSE214C Plastic Silicon Infrared Photo
transistor
Features
■ ■ ■ ■ ■ ■
NPN Silicon Photo
transistor Package Type: Sidelooker Medium Reception Angle, 50° Daylight Filter Clean Epoxy Package Matching Emitter: QEE213
Description
The QSE213C/QSE214C is a silicon photo
transistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package.
Package Dimensions
0.060 (1.50) 0.174 (4.44)
R 0.030 (0.76) 0.047 (1.20)
0.224 (5.71)
0.177 (4.51)
0.030 (0.76) 0.5 (12.7) MIN
EMITTER 0.020 (0.51) SQ. (2X) 0.100 (2.54)
Schematic
Collector
Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
Emitter
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
QSE213C/QSE214C Rev. 1.0.0
QSE213C/QSE214C Plastic Silicon Infrared Photo
transistor
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Symbol
TOPR TSTG TSOL-I TSOL-F VCE VEC PD Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1)
Parameter
Rating
-40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100
Unit
°C °C °C °C V V mW
Electrical/Optical Characteristics (TA =25°C unless otherwise specified)
Symbol Parameter λPS Q ID BVCEO BVECO IC(ON) Peak Sensitivity Reception Angle C...