PN3567

PN3567 PN3567 NPN General Purpose Amplifier This device is for use as a medium amplifier and switch requiring collector currents up 300mA. Sourced from process 19. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 40 80 5 600 - 55 ~ 150 Units V V V mA °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition IC = 30mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 75°C VEB = 4V, IC = 0 VCE = 1V, IC = 150mA VCE = 1V, IC = 30mA IC = 150mA, IB = 15mA VCE = 1V, IC = 150mA VCB = 10V, IE = 0 VEB = 0.5V, IC = 0 40 40 Min. 40 80 5 50 5 25 120 0.25 1.1 20 80 V V pF Typ. Max. Units V V V nA µA nA Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current On Characteristics hFE DC Current Gain VCE(sat) VBE(on) Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Small Signal Characteristics Cobo Output Capacitance Cibo Input Capacitance * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 PN3567 Thermal Characteristics TA=25°C unless o...