PN2369

MMBT2369 / PN2369 — NPN Switching Transistor MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. February 2008 MMBT2369 PN2369 C E B SOT-23 Mark: 1J TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta = 25×C unless otherwise noted Symbol Parameter VCEO VCBO VEBO IC ICP TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous **Collector Current (Pulse) Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0% NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Rati...