P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -16A, RDS(ON) = 86mΩ RDS(ON) = 125mΩ @VGS = -10V. @VGS = -4.5V.
CED6601/CEU6601
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-...
