CED12N10/CEU12N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 11A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
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D G S CEU SERIES TO-252(D-PAK)
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S CED SERIES TO-251(I-PAK)
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ABSOLUTE MAXIMUM...
