CEB80N75

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP80N75 CEB80N75 CEF80N75 VDSS 75V 75V 75V RDS(ON) 13mΩ 13mΩ 13mΩ ID 80A 80A 80A e CEP80N75/CEB80N75 CEF80N75 @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. D G G D S S CEB SERIES TO-263(DD-PAK) G G CEP SERIES TO-220 D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD EAS IAS TJ,Tstg f TO-220F Units V V 75 ±20 80 320 200 1.3 880 45 -55 to 175 80 75 0.5 880 45 e e A A W W/ C mJ A C 320 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.75 62.5 Limit 2 65 Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2007.Feb http://www.cetsemi.com CEP80N75/CEB80N75 CEF80N75 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source O...