CEP655N

CEP655N/CEB655N CEI655N/CEF655N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP655N CEB655N CEI655N CEF655N VDSS 150V 150V 150V 150V RDS(ON) 0.153Ω 0.153Ω 0.153Ω 0.153Ω ID 15A 15A 15A 15A d PRELIMINARY @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD TJ,Tstg e TO-220F Units V V 150 ±25 15 60 83 0.56 -55 to 175 15 60 39 0.26 d d A A W W/ C C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.8 62.5 Limit 3.8 65 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2005.June http://www.cetsemi.com CEP655N/CEB655N CEI655N/CEF655N Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Lea...