N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 66A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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CEP63A3/CEB63A3
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G
G D S
S CEB SERIES TO-263(DD-PAK)
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CEP SERIES TO-22...
