CEP61A2/CEB61A2
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 57A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D PRELIMINARY
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SER...
