CEP50P03/CEB50P03
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS...
CEP50P03/CEB50P03
P-Channel Enhancement Mode Field Effect
Transistor FEATURES
-30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30
Units V V A A W W/ C C
±20
-47 -188 79 0.53 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.9 62.5 Units C/W C/W
Specification and data are subject to change without notice . 1
Rev 2. 2005.May http://www.cetsemi.com
CEP50P03/CEB50P03
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate...