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CEB02N6 Dataheets PDF



Part Number CEB02N6
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEB02N6 DatasheetCEB02N6 Datasheet (PDF)

CEP02N6/CEB02N6 4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a Symbol Condition Min Typ Max Unit 250 50 30 1.5 PF PF PF VDS =25V, VGS = 0V f =1.0MHZ 4 VGS = 0V, Is =2A DRAIN-SOURCE DIODE CHARACTERISTICS VSD V Notes a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. c. L=60mH, .

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CEP02N6/CEB02N6 4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a Symbol Condition Min Typ Max Unit 250 50 30 1.5 PF PF PF VDS =25V, VGS = 0V f =1.0MHZ 4 VGS = 0V, Is =2A DRAIN-SOURCE DIODE CHARACTERISTICS VSD V Notes a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. c. L=60mH, IAS=2.0A, VDD=50V, RG=25Ω , Starting TJ=25 C 3.0 VGS=10,9,8,7V 2.5 ID, Drain Current(A) 2.0 1.5 1.0 ID, Drain Current (A) 150 C 1 VGS=6V VGS=5V 0.5 0 0 2 4 6 8 10 12 -55 C 25 C 1.VDS=40V 2.Pulse Test 0.1 2 4 6 8 10 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 4-4 CEP02N6/CEB02N6 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 600 500 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 ID=1A VGS=10V C, Capacitance (pF) 400 300 200 100 0 0 5 10 15 20 25 Coss Crss Ciss 4 VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250ӴA Figure 4. On-Resistance Variation with Temperature 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250ӴA 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature 20 10 VGS=0V gFS, Transconductance (S) VDS=50V 3 2 Is, Source-drain current (A) 0 1 2 3 4 1 1 0 0.1 0.4 0.6 0.8 1.0 1.2 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 4-5 Figure 8. Body Diode Forward Voltage Variation with Source Current CEP02N6/CEB02N6 VGS, Gate to Source Voltage (V) 15 12 9 6 3 0 0 6 12 18 24 Qg, Total Gate Charge (nC) 10 VDS=480V ID=2A ID, Drain Current (A) 1 R DS 4 (O N) Li t mi D C 10 0 1m ijs s 1 m s 0.1 TC=25C Tj=25 C Single Pulse 1 10 100 500 1000 0.01 VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 1. RįJC (t)=r (t) * RįJC 2. RįJC=See Datasheet 3. TJM-TC = P* RįJC (t) 4. Duty Cycle, D=t1/t2 1 10 100 1000 10000 0.01 0.01 0.1 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 4-6 .


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