CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N6A CEB02N6A C...
CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G
D
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg
f
TO-220F
Units V V
650
±30
1.5 4.5 42 0.33 90 1.4 -55 to 150 1.5 4.5 28 0.22 90 1.4
e e
A A W W/ C mJ A C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 3 62.5 Limit 4.5 65 Units C/W C/W
2003.December 4-6
http://www.cetsemi.com
CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Chara...